Samsung on Thursday introduced that it had expanded its DRAM reminiscence portfolio by bringing a 512GB DDR5 module based mostly on high-k metallic gate (HKMG) course of know-how. The brand new reminiscence module is designed to fulfil the necessities in compute-hungry, high-bandwidth workloads within the fields of supercomputing, synthetic intelligence (AI), and machine studying (ML). The South Korean firm claimed that its DDR5 DRAM is able to delivering greater than twice the efficiency of current DDR4 modules with as much as 7,200 megabits per second (Mbps) information switch price.

As a substitute of utilizing the normal silicon oxynitride, Samsung’s desire of going with the HKMG know-how for the insulation layer of the brand new reminiscence module is touted to scale back energy consumption by 13 p.c over DDR4 modules. The brand new materials will be capable to cut back the present leakage and assist the module attain new efficiency ranges, the corporate stated.

Samsung first used the HKMG course of whereas designing its GDDR6 reminiscence in 2018. Nonetheless, its adoption on the brand new module is mainly aimed to draw information centres and enterprise clients who’re on the lookout for high-speed reminiscence options to course of AI, ML, and information analytics operations.

The DDR5 DRAM by Samsung stakes eight layers of 16Gb DRAM chips utilizing through-silicon through (TSV) know-how to supply 512GB of capability. The corporate is, nonetheless, sampling completely different variations of the DDR5 module to cater to completely different reminiscence calls for over time.

Though current desktops and servers principally assist DDR4, Intel has already proven some curiosity in direction of DDR5 modules. The chipmaker can be working with Samsung notably for its new improvement.

“Intel’s engineering groups intently accomplice with reminiscence leaders like Samsung to ship quick, power-efficient DDR5 reminiscence that’s performance-optimised and appropriate with our upcoming Intel Xeon Scalable processors, codenamed Sapphire Rapids,” stated Carolyn Duran, Vice President and Common Supervisor of Reminiscence and IO Know-how at Intel, in a ready assertion.

Aside from Intel, Samsung is working with Superior Micro Gadgets (AMD) and has despatched samples of its new reminiscence module to some information centre platform builders, Bloomberg reported on Thursday.

“By bringing any such course of innovation to DRAM manufacturing, we’re capable of supply our clients high-performance, but energy-efficient reminiscence options to energy the computer systems wanted for medical analysis, monetary markets, autonomous driving, good cities and past,” stated Younger-Soo Sohn, Vice President of the DRAM Reminiscence Planning/Enabling Group at Samsung Electronics, within the assertion.

Samsung’s DDR5 DRAM module is at present within the testing section, although it’s stated to reach for purchasers by late 2021.

Notably, Samsung is not the one semiconductor firm that has began engaged on DDR5 commonplace. Its homegrown competitor and the second-largest reminiscence chipmaker SK Hynix introduced what it claimed the world’s first DDR5 DRAM in October final 12 months. American firm Rambus additionally introduced again in September 2017 in regards to the improvement of DDR5 reminiscence interface chipsets.


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